| PART |
Description |
Maker |
| LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| BSS84LT1/D BSS84LT1-D |
Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23
Power MOSFET 130 mAmps50 Volts
|
ON Semiconductor
|
| MGSF1N02ELT1-D MGSF1N02ELT1G |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MGSF1N02LT105 MGSF1N02LT3G MGSF1N02LT1 MGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
|
